Exploring the Advanced Optoelectronic Properties of Nd-Doped ZnO Thin Films for Next-Generation Perovskite Solar Cells
来源：ACS Publications
This research provides valuable insights into the effects of neodymium (Nd) doping on the structural, optical, and electrical properties of zinc oxide (ZnO) thin films coated on an ITO substrate. This study deepened our understanding of the unique characteristics and potential applications of these materials by utilizing comprehensive characterization techniques, including X-ray diffraction (XRD), Atomic Force Microscopy (AFM), UV–vis spectroscopy, and photoluminescence spectroscopy. XRD analysis confirmed the presence of hexagonal crystal structures, whereas AFM imaging revealed a distinctive granular configuration. The results indicated that the grain size of the thin films increased from 35.86 to 46.09 nm with increasing Nd doping concentration, demonstrating a relationship between Nd concentration and microstructure. The optical bandgap ranged from 3.29 to 3.21 eV for pure and doped thin films at different DC sputtering powers, and the electrical resistivity decreased from 1.54 × 10–3 to 0.26 × 10–3 Ω·cm with Nd doping, suggesting their potential for optoelectronic applications. The study also presents a numerical analysis of Cs2BiCuI6-based perovskite photovoltaic cells (PPVCs) incorporating Nd-doped ZnO as the electron transport layer (ETL). This research investigates the impact of different Nd doping concentrations (20, 30, and 40 W) on the performance of solar cells by analyzing key metrics.
This study examined the effect of Nd carrier density on ZnO thin films on indium tin oxide (ITO)-coated glass substrates synthesized using RF Magnetron Co-Sputtering. The objective of this study is to investigate the effect of varying the DC power levels of Nd on the structural, optical, and electrical properties of thin films. Incorporating Nd into ZnO improves transmission, photoconductivity, and the optical bandgap, making it a more efficient electron transport layer for perovskite solar cells (PSCs). Additionally, we used the SCAPS-1D simulation program to model the proposed electron transport materials (ZnO and Nd-doped ZnO), validating their design and assessing their performance for practical applications.