来源：ACS PublicationsSeveral series of quaternary sulfides RE3M1–xSnS7 (RE = La–Nd; M = Ti–Cu, Cd) were synthesized by direct reaction of the elements at 1000 °C and their crystal structures were determined by powder X-ray diffraction, as well as single-crystal X-ray diffraction for many members. Most adopt the noncentrosymmetric La3Mn0.5SiS7-type structure (hexagonal, space group P63) consisting of one-dimensional stacks of Sn-centered tetrahedra and columns of face-sharing M-centered octahedra. With focus placed on the La-containing series La3M1–xSnS7, further characterization was perform...
Release time:
2026
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07
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22
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Ultrabright Upconversion in Thermally Crystallized BaYF5:Yb,Er Glass-Ceramics via Dopant Enrichment for Reconfigurable Optical Data Encoding and Logic Operations 来源：ACS PublicationsAll-optical data encoding provides a route to ultrafast, low-energy photonic memory and computation, yet its implementation is hindered by weak nonlinearities and low emission efficiencies in conventional materials. Upconversion luminescence offers strong nonlinear behavior, but typical hosts suffer from inefficient energy transfer, dilute and randomly distributed dopants, and complex excitation demands. Here, we re...
Release time:
2026
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07
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22
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Synthesis of Ce-Doped ZIF-8-Derived Core–Shell ZnO Sensors via Double Sintering for Highly Sensitive Formaldehyde Detection at Room Temperature 来源：ACS PublicationsFormaldehyde, a common indoor air pollutant, poses a serious threat to human health. Therefore, there is an urgent need to develop highly selective and sensitive formaldehyde gas sensors that operate at room temperature. Doping with rare-earth elements is an effectively proven strategy for optimizing the gas-sensing performance at room temperature. This study developed a method to modify ZnO derived from ZIF-8 by doping it with the ...
Release time:
2026
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07
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来源：ACS PublicationsHafnium oxide (HfO2) is considered as the most promising candidate for replacement of conventional SiO2 in complementary metal-oxide semiconductor (CMOS) technology. Owing to the appropriate high dielectric constant (k) of HfO2 with excellent thermodynamic stability against silicon, it is capable of mitigating the major hurdle of high leakage current density encountered in the present CMOS industry. HfO2 primarily exhibits three distinct phases such as monoclinic phase having k ∼ 15 stable at room temperature (RT) and tetragonal (k ∼ 70) and cubic phases (k ∼ 30) observed at...
Release time:
2026
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07
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20
viewed：5